发表论文
1.Chaoying Wang, Chao Zhang, Qianli Xue, Chenliang Li, Baolai Wang, Lijun Yang and Zailin Yang*. The influence of crack on the Si anode performance in Na- and Mg-ion batteries: An atomic multiscale study. Comput. Materi. Sci. 205:111237, 2022
2. Chaoying Wang, Chao Zhang, Qianli Xue, Chenliang Li, Jiaqi Miao, Pengfei Ren, Lijun Yang, Zailin Yang, Atomic mechanism of the distribution and diffusion of lithium in a cracked Si anode, Scripta Materialia. 2021, 197:113807, JCR: 1区
3. Chunyang Wang, Yanzhuo Xue, Chaoying Wang*, Duanfeng Han, Comparative study of the ReaxFF and potential models with density functional theory for simulating hexagonal ice, Computational Materials Science, 2020,177:109546,JCR:2区
4. Chaoying Wang*, Xiaoqing Sun, Chenliang Li, Guoxun Wu, Baolai Wang, Zhenqing Wang, Qingyuan Meng, Lijun Yang. Effects of defect on the storage and diffusion of Na and Mg interstitials in Si anode, J. Alloys Comp, 2016, 654:157-162,JCR:1区
5. Wang, Chaoying, Li, Hecheng, Li, Chenliang, Wu, Guoxun, Sang, Tianyi, Yang, Lijun, Wang, Zhenqing. Effects of 30 degrees partial dislocation and stacking fault on Na and Mg storage and diffusion in Si anode. COMPUTATIONAL MATERIALS SCIENCE,2016,118: 16-21, JCR:2区
6. Chaoying Wang*, Lijun Yang, Wei Zhao, Qingyuan Meng, Guoxun Wu, Baolai Wang and Chenliang Li. Multi-scale simulation of the stability and diffusion of lithium in the presence of a 90°partial dislocation in silicon J. App. Phys. 2014, 116:213504, JCR:2区
7. Chaoying Wang*, LiJun Yang, Wei Zhao, QingYuan Meng, Chenliang Li, and GuoXun Wu, Multi-scale simulation of lithium diffusion in the presence of a 30° partial dislocation and stacking fault in Si. J. Appl. Phys. 2014, 115:043532, JCR:2区
8. Chaoying Wang*, Zhenqing Wang, Qingyuan Meng and Zhaoying Wang. Dynamic properties of reconstruction defect on 90- partial dislocation in Si, Phys. Status Solidi B, 2012, 249:531-534. JCR:3区
9. Chaoying Wang*, Zhenqing Wang,Guojun Li and Qingyuan Meng, INTERACTION BETWEEN THE 30? PARTIAL DISLOCATION AND HEX-VACANCY IN SILICON. Modern Physics Letters B. 2012, 26:1250154. JCR:4区
10. Chaoying Wang*, Zhenqing Wang and Qingyuan Meng. Comparative study of the empirical interatomic potentials and density-functional simulations of divacancy and hexavacancy in silicon, Physica B: Condensed Matter, 2011,406(3): 467-470.JCR:3区
11. Chaoying Wang*, Zhenqing Wang, Qingyuan Meng, Chenliang Li, Hongwei Atomic simulation of the dynamic properties for a double period structure with 90° partial dislocation in Si. Superlattices and Microstructures, 2011,5(2):157-163. JCR:4区
12. Chaoying Wang*, Zhenqing Wang, Qingyuan Meng. Comparative study of the first-principle and empirical potentials simulations of vacancies in silicon. ACTA PHYSICA SINICA, 2010, 59(5): 3370-3376. JCR:3区
13.Chaoying wang*, Qingyuan Meng, Kangyou Zhong, and Zhifu Ying. Atomic simulations of the dynamic properties of the 30° partial dislocation in Si crystal. Phy. Rev. B. 2008, 77: 205209. JCR:2区
14.Chaoying wang* and Qingyuan Meng. Atomic simulation of the 30 degree partial dislocation interaction with divacancy in Silicon. Phys. Status Solidi RRL. 2009, 3(2-3): 73-75. JCR:3区